stifieldoxide

Shallowtrenchisolation(STI),alsoknownasboxisolationtechnique,isanintegratedcircuitfeaturewhichpreventselectriccurrentleakagebetween ...,由KShiozawa著作·1999·被引用9次—WeconcludedthatSTI,inwhichtheoriginalfieldoxideabruptlyprojectsabovethesubstratesurface,hasanadvantageovertheLOCOSnotonlyagainst ...,由CChen著作·2000·被引用4次—Thispaperdescribesanovelshallow-trenchisolation(STI)structuretosuppre...

參考資訊如下
Shallow trench isolation

Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between ...

Advantage of Shallow Trench Isolation over Local ...

由 K Shiozawa 著作 · 1999 · 被引用 9 次 — We concluded that STI, in which the original field oxide abruptly projects above the substrate surface, has an advantage over the LOCOS not only against ...

Shallow-Trench Isolation With Raised-Field

由 C Chen 著作 · 2000 · 被引用 4 次 — This paper describes a novel shallow-trench isolation (STI) structure to suppress the corner metal-oxide semiconductor field-effect transistor (MOSFET) inherent ...

Shallow trench isolation process using oxide deposition ...

After patterning the source/drain areas, a field oxide is grown. ... For example, conventional STI liner oxide processes can utilize temperatures of approximately ...

1.2 Isolation Techniques

With its zero oxide field encroachment STI is more suitable for the increased density requirements, because it allows to form smaller isolation regions. The ...

淺溝渠元件隔離技術現況與挑戰

急迫發展克服先進STI製程的關鍵。高選擇比研漿的選用、線性研磨製程(Linear ... 陷(Oxide Dishing)，而在較大寬度氮化. 矽終止層上仍有殘留氧化矽(Residual. Oxide)未被 ...

Shallow Trench Isolation

In shallow trench isolation (STI), dielectric material separates the two transistors by being located between two devices. From: Advances in Chemical ...